nec' s 3.2 v, 2 w, l&s band medium power silicon ld-mosfet features ? low cost plastic surface mount package: 5.7 x 5.7 x 1.1 mm max ? high output power: +32 dbm typ ? high linear gain: 10 db typ @ 1.8 ghz ? high power added efficiency: 45% typ at 1.8 ghz ? single supply: 2.8 to 6.0 v ne5520279a outline dimensions (units in mm) package outline 79a notes: 1. dc performance is 100% testing. rf performance is testing several samples per wafer . wafer rejection criteria for standard devices is 1 reject for several samples. 2. p in = 5 dbm description nec's ne5520279a is an n-channel silicon power laterally diffused mosfet specially designed as the power ampli?er for mobile and ?xed wireless applications. die are manu - factured using nec's newmos technology (nec's 0.6 m wsi gate lateral mosfet) and housed in a surface mount package. ? digital cellular phones: 3.2 v dcs1800 handsets ? 0.7-2.5 ghz fixed wireless access ? w-lan ? short range wireless ? retail business radio ? special mobile radio applications california eastern laboratories 0.90.2 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain a 2 0 x 0 0 1 electrical characteristics (t a = 25c) part number ne5520279a package outline 79a symbols characteristics units min typ max test conditions p out output power dbm 30.5 32.0 g l linear gain db 10 add power added ef?ciency % 40 45 i d drain current ma 800 i gss gate-to-source leakage current na 100 v gs = 5.0 v i dss saturated drain current na 100 v ds = 6.0 v (zero gate voltage drain current) v th gate threshold voltage v 1.0 1.4 1.9 v ds = 3.5 v, i ds = 1 ma g m transconductance s 1.3 v ds = 3.5 v, i ds = 700 ma bv dss drain-to-source breakdown voltage v 15 18 i dss = 10 a r th thermal resistance c/w 8 channel-to-case functional characteristics electrical dc characteristics f = 1.8 ghz, v ds = 3.2 v, i dsq = 700 ma, p in = 25 dbm, except p in = 5 dbm for linear gain
absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v ds drain supply voltage v 15.0 v gs gate supply voltage v 5.0 i d drain current a 0.6 i d drain current (pulse test) 2 a 1.2 p t total power dissipation w 12.5 t ch channel temperature c 125 t stg storage temperature c -55 to +125 recommended operating limits symbols parameters units typ max v ds drain to source voltage v 3.0 6.0 v gs gate supply voltage v 2.0 3.0 i ds drain current 1 a 0.8 1.0 p in input power dbm 25 30 f = 1.8 ghz, v ds = 3.2 v note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. duty cycle 50%, ton = 1 s. ne5520279a note: 1. duty cycle 50%, ton 1 s. part number qty NE5520279A-T1-A ordering information frequency (ghz) z in ( ) z ol ( ) 1 1.8 1.77 ? j6.71 1.25 ? j5.73 note: 1. z ol is the conjugate of optimum load impedance at given voltage, idling current, input power. large signal impedance (v ds = 3.2 v, i d = 700 ma, f = 1.8 ghz)
typical performance curves (t a = 25c) ne5520279a output power, drain current efficiency vs. input power input power,p in (dbm) output power, p out (dbm) drain ef?ciency, d (%) power added ef?ciency, add (%) output power, p out (dbm) output power, drain current efficiency vs. gate to source voltage gate to source voltage, v gs (v) drain ef?ciency, d (%) power added ef?ciency, add (%) output power, drain current efficiency vs. input power input power,p in (dbm) output power, p out (dbm) drain ef?ciency, d (%) power added ef?ciency, add (%) average two tone ouput power, p out (dbm) imd, (dbc) imd vs. two tone output power output power, p out (dbm) output power, drain current efficiency vs. input power input power,p in (dbm) drain ef?ciency, d (%) power added ef?ciency, add (%) output power, p out (dbm) output power, drain current efficiency vs. gate to source voltage gate to source voltage, v gs (v) drain ef?ciency, d (%) power added ef?ciency, add (%) p out i ds d 10 15 20 25 30 5 35 30 25 20 15 10 0 25 50 75 100 125 0 1000 750 50 0 250 0 i ds (ma) a dd f = 1.8 ghz v ds = 3.2 v i dq = 300 ma p out i ds d 1 2 3 4 0 35 30 25 20 15 10 0 25 50 75 10 0 125 0 1000 750 50 0 250 0 i ds (ma) a dd f = 1.8 ghz v ds = 3.2 v p in = 25 db m p out i ds d 10 15 20 25 30 5 35 30 25 20 15 10 0 25 50 75 100 250 0 2000 1500 1000 50 0 0 i ds (ma) a dd f = 1.8 ghz v ds = 3.2 v i dq = 700 ma im 3 im 5 15 20 25 30 35 10 -7 0 -6 0 -5 0 -4 0 -3 0 -20 -1 0 f = 1.8 ghz ? f = 1 mhz v ds = 3.2 v i dq = 700 ma p out i ds d 10 15 20 25 30 35 35 40 30 25 20 15 0 25 50 75 100 250 0 2000 1500 1000 50 0 0 i ds (ma) a dd f = 2.00 ghz v ds = 5.0 v i dq = 300 ma p out i ds d 1 2 3 4 0 40 35 30 25 20 15 0 25 50 75 10 0 250 0 2000 150 0 1000 50 0 0 i ds (ma) a dd f = 2.00 ghz v ds = 5.0 v p in = 27 db m
ne5520279a typical scattering parameters (t a = 25c) coordinates in ohms frequency in ghz v d = 5.0 v, i d = 400 ma note: this ?le and many other s-parameter ?les can be downloaded from www.cel.com frequency s 11 s 21 s 12 s 22 k mag 1 ghz mag ang mag ang mag ang mag ang (db) 0.100 0.885 -152.5 11.510 98.5 0.021 10.3 0.830 -170.1 0.03 27.43 0.200 0.885 -166.9 5.882 87.7 0.022 0.2 0.833 -175.4 0.07 24.21 0.300 0.883 -172.4 3.896 80.8 0.022 - 5.2 0.840 -177.5 0.11 22.51 0.400 0.885 -175.6 2.897 75.2 0.021 - 9.2 0.849 -178.5 0.14 21.31 0.500 0.887 -177.9 2.278 70.1 0.021 - 12.9 0.851 -179.3 0.20 20.41 0.600 0.890 -179.8 1.865 65.3 0.020 - 15.7 0.856 179.9 0.27 19.66 0.700 0.895 178.7 1.569 60.7 0.020 - 19.3 0.861 179.1 0.30 19.05 0.800 0.900 177.3 1.346 56.5 0.019 - 21.8 0.869 178.4 0.32 18.55 0.900 0.905 176.0 1.168 52.4 0.018 - 24.5 0.876 177.9 0.36 18.12 1.000 0.911 174.6 1.024 48.5 0.017 - 27.2 0.882 177.2 0.39 17.79 1.100 0.916 173.6 0.911 44.7 0.016 - 28.8 0.894 176.5 0.36 17.48 1.200 0.921 172.2 0.812 40.9 0.015 - 30.8 0.898 175.5 0.42 17.21 1.300 0.924 171.0 0.728 37.5 0.015 - 33.3 0.903 174.7 0.47 16.93 1.400 0.926 169.9 0.655 34.1 0.014 - 33.9 0.907 173.9 0.62 16.84 1.500 0.927 168.7 0.594 30.8 0.013 - 36.0 0.914 172.9 0.68 16.65 1.600 0.929 167.5 0.541 27.9 0.012 - 36.6 0.921 172.2 0.76 16.54 1.700 0.930 166.3 0.494 25.1 0.011 - 37.3 0.925 171.5 0.98 16.58 1.800 0.931 165.2 0.451 22.4 0.010 - 38.5 0.926 170.7 1.22 13.67 1.900 0.935 164.1 0.415 19.6 0.009 - 38.5 0.930 169.8 1.35 12.97 2.000 0.937 162.9 0.384 17.1 0.009 - 38.8 0.937 169.0 1.33 12.95 2.100 0.941 161.8 0.356 14.9 0.008 - 36.9 0.942 168.5 1.45 12.62 2.200 0.944 160.6 0.329 12.6 0.007 - 40.8 0.941 167.8 1.74 11.58 2.300 0.949 159.5 0.305 10.2 0.006 - 36.6 0.942 167.0 2.04 11.01 2.400 0.950 158.3 0.285 7.7 0.006 - 36.0 0.947 166.0 2.04 11.00 2.500 0.955 157.3 0.267 5.8 0.005 - 34.6 0.952 165.5 2.04 11.27 2.600 0.956 156.3 0.248 4.0 0.005 - 32.7 0.953 164.9 2.59 10.34 2.700 0.958 155.4 0.232 2.0 0.004 - 31.4 0.952 164.2 3.32 9.53 2.800 0.957 154.5 0.217 0.0 0.003 - 27.2 0.954 163.2 4.54 8.76 2.900 0.959 153.8 0.204 - 1.6 0.003 - 22.0 0.958 162.4 5.69 8.58 3.000 0.959 152.9 0.192 - 3.1 0.003 - 5.2 0.961 161.9 5.78 8.26 3.100 0.962 152.5 0.180 - 4.5 0.002 - 1.3 0.960 161.1 9.71 7.87 3.200 0.961 151.5 0.170 - 6.1 0.002 27.2 0.960 160.2 9.31 7.08 3.300 0.965 150.8 0.161 - 7.6 0.002 56.3 0.964 159.4 9.54 7.19 3.400 0.967 150.1 0.152 - 8.8 0.002 79.5 0.965 158.6 7.96 6.89 3.500 0.971 149.6 0.144 - 10.0 0.003 86.6 0.963 157.6 5.89 6.46 ne5520279a v d = 5.0 v, i d = 400 ma mag = maximum available gain msg = maximum stable gain note: 1. gain calculation: mag = |s 21 | |s 12 | k - 1 ). 2 ( k ? = s 11 s 22 - s 21 s 12 when k 1, mag is undefined and msg values are used. msg = |s 21 | |s 12 | , k = 1 + | ? | - |s 11 | - |s 22 | 2 2 2 2 |s 12 s 21 | , j50 j25 j10 0 10 25 -j10 -j25 -j50 -j10 0 j100 0 50 10 0 s 22 s 11 -120 ? -90? -60? s 21 s 12 120 ? 90 ? 60? 30 ? 150 ? 180? -150? -30? 0?
ne5520279a p.c.b. layout (units in mm) 79a package 4.0 1.7 6.1 0.5 0.5 source drain gate 5.9 1.2 1.0 0.5 through hole 0.2 33 application circuit (2.40-2.48 ghz) j3 j4 p1 gnd v g v d rf in rf out c14 c1 5 .30mm .63mm 5.74m m a 2 9 8 er=4.2 t=0.028 in ou 50085 5 c13 c1 2 c1 0 c8 c2 c3 c9 c11 c1 j2 j1 r1 u1 c4 c5 c6 j1 rf input j3 +vg c5 c7 ne5520279 a c1 4 r1 c1 5 c4 c13 c1 1 c9 c3 c2 c8 c1 0 c1 rf outpu t j2 c1 2 j4 +vd 1 sd-500881 schematic diagram ne5520279a-eval 18 1 tf-100637 test circuit blk 17 4 2-56 x 3/16 phillips pan head 16 2 ma101j c2,c3 case 1 100pf cap murata 15 1 mcr03j200 r1 0603 20 ohm resistor rohm 14 1 600s2r7cw c4 0603 2.7pf cap atc 13 1 600s2r2bw c15 0603 2.2pf cap atc 12 1 600s1r2bw c14 0805 1.2pf cap atc 11 2 600s5r6cw c1, c5 0603 5.6pf cap atc 10 1 600s3r3cw c6 0603 3.3pf cap atc 9 2 tajb475k010r c12, c13 case b 4.7 uf cap avx 8 2 grm40x7r104k025bl c10, c11 0805 .1uf cap murata 7 2 grm40c0g102j050bd c8, c9 0805 1000 pf cap murata 6 1 ne5520279a u1 ic nec 5 1 703401 p1 ground lug concord 4 1 1250-003 j3, j4 feedthru murata 3 2 2052-5636-02 j1, j2 flange mount jack receptacle 2 1 fd-500855b pcb s-band module fabrication drawing 1 ne5520279a parts list
ne5520279a typical application circuit performance (t a = 25c) output power, p out (dbm) output power vs. input power input power, p in (dbm) im3 vs. output power output power, p out (dbm), each tone im3 (dbc) 13 20 22 24 26 30 28 32 34 36 14 15 16 17 18 19 20 21 22 23 24 25 26 27 3.6 v , 300 ma 3.6 v , 500 ma 6.0 v , 300 ma 6.0 v , 500 ma f= 2.44 ghz 12 -55.0 -50.0 -45.0 -40.0 -35.0 -30.0 -25.0 -20.0 -20.0 -20.0 14 16 18 20 22 24 26 28 30 3.6 v , 300 ma 3.6 v , 500 ma 6.0 v , 300 ma 6.0 v , 300 ma f= 2.44 ghz
recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales of?ce. ne5520279a soldering method soldering conditions condition symbol infrared re?ow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of re?ow processes : 3 times maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 c or below time at temperature of 200 c or higher : 25 to 40 seconds preheating time at 120 to 150 c : 30 to 60 seconds maximum number of re?ow processes : 3 times maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of ?ow processes : 1 time maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 c or below soldering time (per pin of device) : 3 seconds or less maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below hs350-p3 caution do not use different soldering methods together (except for partial heating). life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec co m p ound semiconductor devices, ltd . 09/03/2003
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
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